DI0A35N06PGK-AQ Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET N-CH 60V 350MA SC-101
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Power Dissipation (Max): 223mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис DI0A35N06PGK-AQ Diotec Semiconductor
Description: MOSFET N-CH 60V 350MA SC-101, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V, Power Dissipation (Max): 223mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN1006-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції DI0A35N06PGK-AQ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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DI0A35N06PGK-AQ | Diotec Semiconductor |
Description: MOSFET N-CH 60V 350MA SC-101 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Power Dissipation (Max): 223mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
DI0A35N06PGK-AQ | Diotec Semiconductor |
MOSFETs MOSFET, DFN1006-3, 60V, 0.35A, 150C, N, AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| DI0A35N06PGK-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 1.9nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| DI0A35N06PGK-AQ |
|
Виробник: Diotec Semiconductor
Description: MOSFET N-CH 60V 350MA SC-101
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Power Dissipation (Max): 223mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 350MA SC-101
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Power Dissipation (Max): 223mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DI0A35N06PGK-AQ |
|
Виробник: Diotec Semiconductor
MOSFETs MOSFET, DFN1006-3, 60V, 0.35A, 150C, N, AEC-Q101
MOSFETs MOSFET, DFN1006-3, 60V, 0.35A, 150C, N, AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DI0A35N06PGK-AQ |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.