DI0A35N06PGK Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: DI0A35N06PGK
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Power Dissipation (Max): 223mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V
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Технічний опис DI0A35N06PGK Diotec Semiconductor
Description: DI0A35N06PGK, Packaging: Bulk, Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V, Power Dissipation (Max): 223mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V.
Інші пропозиції DI0A35N06PGK
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DI0A35N06PGK | Виробник : Diotec Semiconductor |
MOSFETs DFN1006-3, N, 60V, 0.35A, 1.4?, 150C |
товару немає в наявності |
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| DI0A35N06PGK | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 1.9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |