DI100N04D1 Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET N-CH 40V 100A TO-252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 20 V
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Технічний опис DI100N04D1 Diotec Semiconductor
Description: MOSFET N-CH 40V 100A TO-252-3, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V, Power Dissipation (Max): 83.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 20 V.
Інші пропозиції DI100N04D1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
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DI100N04D1 | Diotec Semiconductor |
MOSFETs MOSFET, DPAK, 40V, 100A, 150C, N |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
|
DI100N04D1 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 73A; Idm: 450A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 73A Pulsed drain current: 450A Power dissipation: 69W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| DI100N04D1 |
![]() |
Виробник: Diotec Semiconductor
MOSFETs MOSFET, DPAK, 40V, 100A, 150C, N
MOSFETs MOSFET, DPAK, 40V, 100A, 150C, N
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DI100N04D1 |
![]() |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 73A; Idm: 450A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 450A
Power dissipation: 69W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 73A; Idm: 450A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 450A
Power dissipation: 69W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.



