DI100N10PQ DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 400A; 250W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 400A
Power dissipation: 250W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 4836 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 81.63 грн |
| 6+ | 68.85 грн |
| 16+ | 52.85 грн |
| 43+ | 50.07 грн |
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Технічний опис DI100N10PQ DIOTEC SEMICONDUCTOR
Description: MOSFET PWRQFN 5X6 100V 0.0045OHM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-QFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V.
Інші пропозиції DI100N10PQ за ціною від 58.42 грн до 228.99 грн
| Фото | Назва | Виробник | Інформація |
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DI100N10PQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 400A; 250W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 400A Power dissipation: 250W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 4836 шт: термін постачання 7-14 дні (днів) |
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DI100N10PQ | Виробник : Diotec Semiconductor |
MOSFET MOSFET, PowerQFN 5x6, 100V, 80A, 150C, N |
на замовлення 3458 шт: термін постачання 21-30 дні (днів) |
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| DI100N10PQ | Виробник : Diotec Semiconductor |
MOSFET, PowerQFN 5x6, 100V, 100A, 0, 250W |
товар відсутній |
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DI100N10PQ | Виробник : Diotec Semiconductor |
Description: MOSFET PWRQFN 5X6 100V 0.0045OHM Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V |
товар відсутній |
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DI100N10PQ | Виробник : Diotec Semiconductor |
Description: MOSFET PWRQFN 5X6 100V 0.0045OHM Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V |
товар відсутній |