Технічний опис DI1010S_R2_00001 Panjit
Category: SMD/THT sing. phase diode bridge rectif., Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; SMT, Type of bridge rectifier: single-phase, Max. off-state voltage: 1kV, Load current: 1A, Case: SDIP 4L, Electrical mounting: SMT, Max. forward voltage: 1.1V, Kind of package: reel; tape, Max. forward impulse current: 30A, Features of semiconductor devices: glass passivated.
Інші пропозиції DI1010S_R2_00001
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
DI1010S-R2-00001 | Panjit |
Bridge Rectifiers |
товару немає в наявності |
В кошику од. на суму грн. |
|
DI1010S_R2_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1A Case: SDIP 4L Electrical mounting: SMT Max. forward voltage: 1.1V Kind of package: reel; tape Max. forward impulse current: 30A Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. |
| DI1010S-R2-00001 |
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Виробник: Panjit
Bridge Rectifiers
Bridge Rectifiers
товару немає в наявності
В кошику
од. на суму грн.
| DI1010S_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Case: SDIP 4L
Electrical mounting: SMT
Max. forward voltage: 1.1V
Kind of package: reel; tape
Max. forward impulse current: 30A
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Case: SDIP 4L
Electrical mounting: SMT
Max. forward voltage: 1.1V
Kind of package: reel; tape
Max. forward impulse current: 30A
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.




