DI110N04PQ-AQ Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: MOSFET, POWERQFN 5X6, 40V, 110A,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4842 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.83 грн |
| 10+ | 49.38 грн |
| 100+ | 38.41 грн |
| 500+ | 30.55 грн |
| 1000+ | 24.89 грн |
| 2000+ | 23.43 грн |
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Технічний опис DI110N04PQ-AQ Diotec Semiconductor
Description: MOSFET, POWERQFN 5X6, 40V, 110A,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції DI110N04PQ-AQ за ціною від 35.92 грн до 112.16 грн
| Фото | Назва | Виробник | Інформація |
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DI110N04PQ-AQ | Виробник : Diotec Semiconductor |
MOSFET MOSFET, PowerQFN 5x6, 40V, 110A, 150C, N, AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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| DI110N04PQ-AQ | Виробник : Diotec Semiconductor |
N-Channel Power MOSFET |
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| DI110N04PQ-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Pulsed drain current: 400A Power dissipation: 42W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 5000 шт |
товар відсутній |
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DI110N04PQ-AQ | Виробник : Diotec Semiconductor |
Description: MOSFET, POWERQFN 5X6, 40V, 110A, Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
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| DI110N04PQ-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Pulsed drain current: 400A Power dissipation: 42W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |