DI110N06D2-AQ Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: DI110N06D2-AQ
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4597 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис DI110N06D2-AQ Diotec Semiconductor
Description: DI110N06D2-AQ, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AB (D2PAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4597 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції DI110N06D2-AQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DI110N06D2-AQ | Виробник : Diotec Semiconductor |
MOSFETs D2PAK, N, 60V, 110A |
товару немає в наявності |
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| DI110N06D2-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 480A; 62.5W Mounting: SMD Case: D2PAK; TO263AB On-state resistance: 3.2mΩ Gate-source voltage: ±20V Power dissipation: 62.5W Drain-source voltage: 60V Application: automotive industry Pulsed drain current: 480A Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 75nC Drain current: 70A |
товару немає в наявності |