DI110N15PQ Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET, 150V, 110A, 56W
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 1250+ | 471.45 грн |
| 2500+ | 356.20 грн |
| 5000+ | 242.70 грн |
| 10000+ | 226.77 грн |
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Технічний опис DI110N15PQ Diotec Semiconductor
Description: MOSFET, 150V, 110A, 56W, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-QFN (5x6), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 56W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DI110N15PQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DI110N15PQ | Виробник : Diotec Semiconductor |
MOSFET MOSFET, PowerQFN 5x6, 150V, 110A, 150C, N |
товару немає в наявності |