DI114N06PQ DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 72.5A; Idm: 480A; 63.8W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 72.5A
Pulsed drain current: 480A
Power dissipation: 63.8W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 4+ | 115.69 грн |
| 5+ | 96.52 грн |
| 25+ | 84.77 грн |
| 100+ | 77.21 грн |
| 500+ | 72.18 грн |
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Технічний опис DI114N06PQ DIOTEC SEMICONDUCTOR
Description: IC, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 114A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V, Power Dissipation (Max): 63.8W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 78.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4130 pF @ 30 V.
Інші пропозиції DI114N06PQ за ціною від 108.42 грн до 127.69 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DI114N06PQ | Виробник : Diotec Semiconductor | DI114N06PQ |
на замовлення 4994 шт: термін постачання 21-31 дні (днів) |
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DI114N06PQ | Виробник : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 63.8W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 78.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4130 pF @ 30 V |
товару немає в наявності |