DI200N04D2 Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET D2PAK N 40V 200A
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 5832 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 120A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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Технічний опис DI200N04D2 Diotec Semiconductor
Description: MOSFET D2PAK N 40V 200A, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 5832 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263AB (D2PAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 225W (Tc), Rds On (Max) @ Id, Vgs: 1.55mOhm @ 120A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Інші пропозиції DI200N04D2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DI200N04D2 | Виробник : Diotec Semiconductor |
MOSFETs D2PAK, N, 40V, 200A, 1.6m?, 150C |
товару немає в наявності |