DI200N04D2

DI200N04D2 Diotec Semiconductor


di200n04d2.pdf Виробник: Diotec Semiconductor
Description: MOSFET D2PAK N 40V 200A
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 120A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5832 pF @ 20 V
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Технічний опис DI200N04D2 Diotec Semiconductor

Description: MOSFET D2PAK N 40V 200A, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 1.55mOhm @ 120A, 10V, Power Dissipation (Max): 225W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AB (D2PAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5832 pF @ 20 V.

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DI200N04D2 DI200N04D2 Виробник : Diotec Semiconductor di200n04d2.pdf MOSFETs D2PAK, N, 40V, 200A, 1.6m?, 150C
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DI200N04D2 DI200N04D2 Виробник : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA7E630031E22A0D6&compId=di200n04d2.pdf?ci_sign=5b9553c9c893744fd53255b895c39d775a08b9ea Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 800A; 225W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 800A
Power dissipation: 225W
Case: D2PAK; TO263AB
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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