DI200N04PQ Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET PWRQFN 5X6 40V 0.0013OHM
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5768 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Відгуки про товар
Написати відгук
Технічний опис DI200N04PQ Diotec Semiconductor
Description: MOSFET PWRQFN 5X6 40V 0.0013OHM, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 5768 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: 8-QFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 180W (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel.
Інші пропозиції DI200N04PQ за ціною від 60.34 грн до 220.56 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DI200N04PQ | Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 5x6, 40V, 200A, 150C, N |
на замовлення 4968 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
DI200N04PQ | Diotec Semiconductor |
Description: MOSFET PWRQFN 5X6 40V 0.0013OHM Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 5768 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 8-QFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
| DI200N04PQ |
|
Виробник: Diotec Semiconductor
MOSFETs MOSFET, PowerQFN 5x6, 40V, 200A, 150C, N
MOSFETs MOSFET, PowerQFN 5x6, 40V, 200A, 150C, N
на замовлення 4968 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 173.16 грн |
| 10+ | 124.64 грн |
| 100+ | 78.70 грн |
| 500+ | 75.25 грн |
| 5000+ | 61.16 грн |
| 10000+ | 60.34 грн |
| DI200N04PQ |
|
Виробник: Diotec Semiconductor
Description: MOSFET PWRQFN 5X6 40V 0.0013OHM
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5768 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET PWRQFN 5X6 40V 0.0013OHM
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5768 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.56 грн |
| 10+ | 138.13 грн |
| 100+ | 95.99 грн |
| 500+ | 76.93 грн |