DI330N04D7 Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET N-CH 40V 330A TO-263-8
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12850 pF @ 20 V
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 387.54 грн |
| 10+ | 248.82 грн |
| 100+ | 178.31 грн |
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Технічний опис DI330N04D7 Diotec Semiconductor
Description: MOSFET N-CH 40V 330A TO-263-8, Packaging: Bulk, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330A (Tc), Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12850 pF @ 20 V.
Інші пропозиції DI330N04D7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DI330N04D7 | Diotec Semiconductor |
MOSFETs D2PAK-6L, N, 40V, 330A, 0.8m?, 175C |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
 |
DI330N04D7 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 1.4A; 375W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Pulsed drain current: 1.4A Power dissipation: 375W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 0.75mΩ Mounting: SMD Gate charge: 157nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| DI330N04D7 |
|
Виробник: Diotec Semiconductor
MOSFETs D2PAK-6L, N, 40V, 330A, 0.8m?, 175C
MOSFETs D2PAK-6L, N, 40V, 330A, 0.8m?, 175C
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| DI330N04D7 |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 1.4A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 1.4A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 0.75mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 1.4A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 1.4A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 0.75mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.