DI330N04D7

DI330N04D7 DIOTEC SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA7E66C839B4320D6&compId=di330n04d7.pdf?ci_sign=894b3a23fdea00fb13cf56e7e2a751dcfe72f9be Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 1.4A; 375W; D2PAK-7
Case: D2PAK-7
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 0.75mΩ
Power dissipation: 375W
Pulsed drain current: 1.4A
Drain current: 330A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис DI330N04D7 DIOTEC SEMICONDUCTOR

Description: MOSFET D2PAK-7L N 40V 330A, Packaging: Bulk, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330A (Tc), Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12850 pF @ 20 V.

Інші пропозиції DI330N04D7

Фото Назва Виробник Інформація Доступність
Ціна
DI330N04D7 DI330N04D7 Виробник : Diotec Semiconductor di330n04d7.pdf Description: MOSFET D2PAK-7L N 40V 330A
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12850 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
DI330N04D7 DI330N04D7 Виробник : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA7E66C839B4320D6&compId=di330n04d7.pdf?ci_sign=894b3a23fdea00fb13cf56e7e2a751dcfe72f9be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 1.4A; 375W; D2PAK-7
Case: D2PAK-7
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 0.75mΩ
Power dissipation: 375W
Pulsed drain current: 1.4A
Drain current: 330A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.