Продукція > DIOTEC SEMICONDUCTOR > DI330N04D7

DI330N04D7 Diotec Semiconductor

Виробник: Diotec Semiconductor
Description: MOSFET D2PAK-7L N 40V 330A
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12850 pF @ 20 V

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Технічний опис DI330N04D7 Diotec Semiconductor

Description: MOSFET D2PAK-7L N 40V 330A, Packaging: Bulk, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330A (Tc), Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12850 pF @ 20 V.

Інші пропозиції DI330N04D7

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	DI330N04D7	Виробник : DIOTEC SEMICONDUCTOR	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 1.4A; 375W; D2PAK-7 Case: D2PAK-7 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 157nC On-state resistance: 0.75mΩ Power dissipation: 375W Pulsed drain current: 1.4A Drain current: 330A Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement	товару немає в наявності	В кошику од. на суму грн.