DIF120SIC022 Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: SIC MOSFET, TO-247-4L, N, 120A,
Input Capacitance (Ciss) (Max) @ Vds: 4817 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4V @ 23.5mA
Power Dissipation (Max): 340W (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 18V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 1+ | 1985.82 грн |
| 30+ | 1241.58 грн |
| 120+ | 1193.97 грн |
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Технічний опис DIF120SIC022 Diotec Semiconductor
Description: SIC MOSFET, TO-247-4L, N, 120A,, Input Capacitance (Ciss) (Max) @ Vds: 4817 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +18V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 4V @ 23.5mA, Power Dissipation (Max): 340W (Tc), Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 18V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Інші пропозиції DIF120SIC022 за ціною від 1130.84 грн до 2482.36 грн
| Фото | Назва | Виробник | Інформація |
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Ціна |
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DIF120SIC022 | Diotec Semiconductor |
SiC MOSFETs 1200V TO-247-4L, N, 120A, 1200V, 22.3m?, 175 Deg C |
на замовлення 438 шт: термін постачання 21-30 дні (днів) |
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DIF120SIC022 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 85A Pulsed drain current: 250A Power dissipation: 340W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 28mΩ Mounting: THT Gate charge: 269nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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| DIF120SIC022 |
|
Виробник: Diotec Semiconductor
SiC MOSFETs 1200V TO-247-4L, N, 120A, 1200V, 22.3m?, 175 Deg C
SiC MOSFETs 1200V TO-247-4L, N, 120A, 1200V, 22.3m?, 175 Deg C
на замовлення 438 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2050.34 грн |
| 10+ | 1316.64 грн |
| 510+ | 1130.84 грн |
| DIF120SIC022 |
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Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 269nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 269nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
на замовлення 30 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2482.36 грн |
| 5+ | 1954.60 грн |
| 30+ | 1772.60 грн |