DIF120SIC028 DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 295A; 715W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 84A
Pulsed drain current: 295A
Power dissipation: 715W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 373nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
| Кількість | Ціна |
|---|---|
| 1+ | 2132.30 грн |
| 5+ | 1709.95 грн |
| 10+ | 1544.88 грн |
| 30+ | 1439.92 грн |
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Технічний опис DIF120SIC028 DIOTEC SEMICONDUCTOR
Description: SIC MOSFET, TO-247-4L, N, 118A,, Input Capacitance (Ciss) (Max) @ Vds: 5691 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 373 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 4V @ 25mA, Power Dissipation (Max): 715W (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 80A, 20V, Current - Continuous Drain (Id) @ 25°C: 118A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Інші пропозиції DIF120SIC028 за ціною від 1409.03 грн до 6624.44 грн
| Фото | Назва | Виробник | Інформація |
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Ціна |
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DIF120SIC028 | Diotec Semiconductor |
Description: SIC MOSFET, TO-247-4L, N, 118A, Input Capacitance (Ciss) (Max) @ Vds: 5691 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 373 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +20V, -5V Drive Voltage (Max Rds On, Min Rds On): 20V Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 4V @ 25mA Power Dissipation (Max): 715W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 80A, 20V Current - Continuous Drain (Id) @ 25°C: 118A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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DIF120SIC028 | Diotec Semiconductor |
SiC MOSFETs |
на замовлення 450 шт: термін постачання 21-30 дні (днів) |
|
| DIF120SIC028 |
|
Виробник: Diotec Semiconductor
Description: SIC MOSFET, TO-247-4L, N, 118A,
Input Capacitance (Ciss) (Max) @ Vds: 5691 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 373 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4V @ 25mA
Power Dissipation (Max): 715W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 80A, 20V
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: SIC MOSFET, TO-247-4L, N, 118A,
Input Capacitance (Ciss) (Max) @ Vds: 5691 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 373 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4V @ 25mA
Power Dissipation (Max): 715W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 80A, 20V
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2265.10 грн |
| 30+ | 1433.21 грн |
| 120+ | 1409.03 грн |
| DIF120SIC028 |
|
Виробник: Diotec Semiconductor
SiC MOSFETs
SiC MOSFETs
на замовлення 450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6624.44 грн |
| 10+ | 5104.79 грн |
| 120+ | 2662.53 грн |