DIF120SIC053-AQ DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
| Кількість | Ціна |
|---|---|
| 1+ | 1614.49 грн |
| 5+ | 1378.12 грн |
| 10+ | 1329.87 грн |
| 30+ | 1292.62 грн |
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Технічний опис DIF120SIC053-AQ DIOTEC SEMICONDUCTOR
Description: MOSFET TO-247-4L N 65A 1200V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 33A, 18V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4V @ 9.5mA, Supplier Device Package: TO-247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 1000 V, Qualification: AEC-Q101.
Інші пропозиції DIF120SIC053-AQ за ціною від 1323.48 грн до 6221.59 грн
| Фото | Назва | Виробник | Інформація |
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Ціна |
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DIF120SIC053-AQ | Diotec Semiconductor |
Description: MOSFET TO-247-4L N 65A 1200V Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 33A, 18V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 9.5mA Supplier Device Package: TO-247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 1000 V Qualification: AEC-Q101 |
на замовлення 433 шт: термін постачання 21-31 дні (днів) |
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DIF120SIC053-AQ | Diotec Semiconductor |
SiC MOSFETs |
на замовлення 448 шт: термін постачання 21-30 дні (днів) |
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| DIF120SIC053-AQ |
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Виробник: Diotec Semiconductor
Description: MOSFET TO-247-4L N 65A 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 33A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 9.5mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 1000 V
Qualification: AEC-Q101
Description: MOSFET TO-247-4L N 65A 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 33A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 9.5mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 1000 V
Qualification: AEC-Q101
на замовлення 433 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1832.33 грн |
| 30+ | 1323.48 грн |
| DIF120SIC053-AQ |
|
Виробник: Diotec Semiconductor
SiC MOSFETs
SiC MOSFETs
на замовлення 448 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6221.59 грн |
| 10+ | 4795.04 грн |
| 120+ | 2500.07 грн |