DIF120SIC053 DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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Технічний опис DIF120SIC053 DIOTEC SEMICONDUCTOR
Description: SIC MOSFET, TO-247-4L, N, 65A, 1, Power Dissipation (Max): 278W (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 33A, 18V, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +18V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 4V @ 9.5mA.
Інші пропозиції DIF120SIC053 за ціною від 372.67 грн до 1639.29 грн
| Фото | Назва | Виробник | Інформація |
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DIF120SIC053 | Diotec Semiconductor |
Description: SIC MOSFET, TO-247-4L, N, 65A, 1 Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 33A, 18V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +18V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 4V @ 9.5mA |
на замовлення 147 шт: термін постачання 21-31 дні (днів) |
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DIF120SIC053 | Diotec Semiconductor |
SiC MOSFETs |
на замовлення 445 шт: термін постачання 21-30 дні (днів) |
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| DIF120SIC053 |
|
Виробник: Diotec Semiconductor
Description: SIC MOSFET, TO-247-4L, N, 65A, 1
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 33A, 18V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4V @ 9.5mA
Description: SIC MOSFET, TO-247-4L, N, 65A, 1
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 33A, 18V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4V @ 9.5mA
на замовлення 147 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 760.31 грн |
| 30+ | 437.41 грн |
| 120+ | 372.67 грн |
| DIF120SIC053 |
|
Виробник: Diotec Semiconductor
SiC MOSFETs
SiC MOSFETs
на замовлення 445 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1639.29 грн |
| 10+ | 1263.26 грн |
| 120+ | 658.95 грн |
| 510+ | 489.47 грн |
| 1020+ | 477.51 грн |