DIF170SIC049 Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: SIC MOSFET, TO-247-4L, N, 67A, 1
Packaging: Tube
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 40A, 18V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Input Capacitance (Ciss) (Max) @ Vds: 3046 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +18V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4V @ 15mA
| Кількість | Ціна |
|---|---|
| 1+ | 1573.62 грн |
| 30+ | 964.13 грн |
| 120+ | 889.90 грн |
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Технічний опис DIF170SIC049 Diotec Semiconductor
Description: SIC MOSFET, TO-247-4L, N, 67A, 1, Packaging: Tube, Power Dissipation (Max): 357W (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 40A, 18V, Current - Continuous Drain (Id) @ 25°C: 67A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Input Capacitance (Ciss) (Max) @ Vds: 3046 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V, Drain to Source Voltage (Vdss): 1700 V, Vgs (Max): +18V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 4V @ 15mA.