DIT150N03

Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 38nC
Heatsink thickness: max. 1.2mm
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 105A
Power dissipation: 130W
Pulsed drain current: 600A

Виробник: Diotec Semiconductor
Description: MOSFET TO220AB N 30V 0.0023OHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V

Виробник: DIOTEC SEMICONDUCTOR
Description: DIOTEC SEMICONDUCTOR - DIT150N03 - Leistungs-MOSFET, n-Kanal, 30 V, 150 A, 3000 µohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 150A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 130W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 3000µohm
SVHC: No SVHC (21-Jan-2025)

Виробник: Diotec Semiconductor
MOSFETs MOSFET, TO-220AB, 30V, 150A, 175C, N