DIW012N65 Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET N-CH 650V 12A TO-247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 40A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1479 pF @ 34 V
Відгуки про товар
Написати відгук
Технічний опис DIW012N65 Diotec Semiconductor
Description: MOSFET N-CH 650V 12A TO-247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 40A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1479 pF @ 34 V.
Інші пропозиції DIW012N65
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DIW012N65 | Diotec Semiconductor |
MOSFETs TO-247-3L, N, 650V, 12A, 0.19?, 150C |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. |
 |
DIW012N65 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.5A; Idm: 60A; 125W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.5A Power dissipation: 125W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 45nC Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. |
| DIW012N65 |
|
Виробник: Diotec Semiconductor
MOSFETs TO-247-3L, N, 650V, 12A, 0.19?, 150C
MOSFETs TO-247-3L, N, 650V, 12A, 0.19?, 150C
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| DIW012N65 |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.5A; Idm: 60A; 125W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.5A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.5A; Idm: 60A; 125W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.5A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 60A
товару немає в наявності
В кошику
од. на суму грн.