DIW065SIC080 Diotec Semiconductor

Description: SIC MOSFET, TO-247-3L, N, 36A, 6, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V, Power Dissipation (Max): 175W (Tc), Vgs(th) (Max) @ Id: 4V @ 5mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 600 V.