DIW120SIC022-AQ Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: SIC MOSFET, TO-247-3L, N, 120A,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 18V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23.5mA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4817 pF @ 1000 V
Qualification: AEC-Q101
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Технічний опис DIW120SIC022-AQ Diotec Semiconductor
Description: SIC MOSFET, TO-247-3L, N, 120A,, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 18V, Power Dissipation (Max): 340W (Tc), Vgs(th) (Max) @ Id: 4V @ 23.5mA, Supplier Device Package: TO-247, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4817 pF @ 1000 V, Qualification: AEC-Q101.
Інші пропозиції DIW120SIC022-AQ за ціною від 2881.24 грн до 4121.20 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DIW120SIC022-AQ | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W Type of transistor: N-MOSFET Technology: SiC Mounting: THT Case: TO247-3 Polarisation: unipolar Gate-source voltage: -4...18V Gate charge: 269nC On-state resistance: 28mΩ Drain current: 85A Pulsed drain current: 250A Power dissipation: 340W Drain-source voltage: 1.2kV Kind of package: tube Application: automotive industry Kind of channel: enhancement |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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DIW120SIC022-AQ | Diotec Semiconductor |
SiC MOSFETs SiC MOSFET, TO-247-3L, 0, 120A, 1200V, 0.0223?, Automotive |
на замовлення 448 шт: термін постачання 21-30 дні (днів) |
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| DIW120SIC022-AQ |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 269nC
On-state resistance: 28mΩ
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Drain-source voltage: 1.2kV
Kind of package: tube
Application: automotive industry
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Mounting: THT
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 269nC
On-state resistance: 28mΩ
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Drain-source voltage: 1.2kV
Kind of package: tube
Application: automotive industry
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4049.45 грн |
| 5+ | 3516.41 грн |
| 30+ | 3288.70 грн |
| DIW120SIC022-AQ |
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Виробник: Diotec Semiconductor
SiC MOSFETs SiC MOSFET, TO-247-3L, 0, 120A, 1200V, 0.0223?, Automotive
SiC MOSFETs SiC MOSFET, TO-247-3L, 0, 120A, 1200V, 0.0223?, Automotive
на замовлення 448 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4121.20 грн |
| 10+ | 3314.23 грн |
| 120+ | 2881.24 грн |