DIW120SIC023-AQ Diotec Semiconductor

Description: MOSFET TO-247-3L N 130A 1200V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 125A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 250µA, Supplier Device Package: TO-247, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 1000 V, Qualification: AEC-Q101.