DIW170SIC030 DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 123A; Idm: 260A; 333W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Technology: SiC
Case: TO247-3
Polarisation: unipolar
On-state resistance: 30mΩ
Drain current: 123A
Pulsed drain current: 260A
Power dissipation: 333W
Drain-source voltage: 1.7kV
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Технічний опис DIW170SIC030 DIOTEC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 123A; Idm: 260A; 333W, Kind of channel: enhancement, Type of transistor: N-MOSFET, Mounting: THT, Technology: SiC, Case: TO247-3, Polarisation: unipolar, On-state resistance: 30mΩ, Drain current: 123A, Pulsed drain current: 260A, Power dissipation: 333W, Drain-source voltage: 1.7kV.