DIW170SIC049 DIOTEC SEMICONDUCTOR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 47A; Idm: 150A; 357W, Case: TO247-3, Mounting: THT, Drain-source voltage: 1.7kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: tube, On-state resistance: 81mΩ, Pulsed drain current: 150A, Power dissipation: 357W, Gate charge: 179nC, Polarisation: unipolar, Technology: SiC, Drain current: 47A, Kind of channel: enhancement.