DIW170SIC070 Diotec Semiconductor

Description: SICFET N-CH 1700V 70A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 20V, Power Dissipation (Max): 416W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 1200 V.