DIW170SIC750 DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 62W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Technology: SiC
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Drain current: 3.5A
Pulsed drain current: 6A
Power dissipation: 62W
Drain-source voltage: 1.7kV
| Кількість | Ціна |
|---|---|
| 2+ | 272.05 грн |
| 10+ | 227.44 грн |
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Технічний опис DIW170SIC750 DIOTEC SEMICONDUCTOR
Description: DIW170SIC750, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 20V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 4V @ 5mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 1000 V.
Інші пропозиції DIW170SIC750
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DIW170SIC750 | Виробник : Diotec Semiconductor |
Description: DIW170SIC750 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 20V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 1000 V |
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