DMC1030UFDB-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N/P-CH 12V 5.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 230000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 9.39 грн |
| 20000+ | 8.37 грн |
| 30000+ | 8.03 грн |
| 50000+ | 7.53 грн |
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Технічний опис DMC1030UFDB-13 Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.36W (Ta), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V, Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMC1030UFDB-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DMC1030UFDB-13 | Виробник : Diodes Incorporated |
MOSFET MOSFETBVDSS: 8V-24V |
товару немає в наявності |