DMC2057UVT-13 Diodes Incorporated

Description: MOSFET N/P-CH 20V 4A TSOT26, Part Status: Active, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 700mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).