DMC2990UDJ-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N/P-CH 20V 0.45A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
на замовлення 3130000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 6.45 грн |
| 30000+ | 6.12 грн |
| 50000+ | 5.75 грн |
| 100000+ | 5.34 грн |
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Технічний опис DMC2990UDJ-7 Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.45A SOT963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA, Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V, Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-963, Part Status: Active.
Інші пропозиції DMC2990UDJ-7 за ціною від 6.14 грн до 28.74 грн
| Фото | Назва | Виробник | Інформація |
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DMC2990UDJ-7 | Виробник : Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.45A SOT963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 Part Status: Active |
на замовлення 3147685 шт: термін постачання 21-31 дні (днів) |
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DMC2990UDJ-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS |
на замовлення 36039 шт: термін постачання 21-30 дні (днів) |
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| DMC2990UDJ-7 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Kind of package: reel; tape Drain-source voltage: 20/-20V Drain current: 0.35/-0.24A On-state resistance: 0.99/1.9Ω Type of transistor: N/P-MOSFET Power dissipation: 0.35W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SOT963 кількість в упаковці: 1 шт |
товар відсутній |
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| DMC2990UDJ-7 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Kind of package: reel; tape Drain-source voltage: 20/-20V Drain current: 0.35/-0.24A On-state resistance: 0.99/1.9Ω Type of transistor: N/P-MOSFET Power dissipation: 0.35W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SOT963 |
товар відсутній |