| Кількість | Ціна |
|---|---|
| 5+ | 65.64 грн |
| 10+ | 39.71 грн |
| 100+ | 23.56 грн |
| 500+ | 18.57 грн |
| 1000+ | 15.40 грн |
| 2000+ | 12.73 грн |
| 4000+ | 12.03 грн |
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Технічний опис DMC3025LNS-7 Diodes Incorporated
Description: MOSFET N/P-CH 30V 7.2A PWRDI3333, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 28mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMC3025LNS-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMC3025LNS-7 | Diodes Incorporated |
 Description: MOSFET N/P-CH 30V 7.2A PWRDI3333Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 28mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| DMC3025LNS-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 7.2A PWRDI3333
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 28mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 30V 7.2A PWRDI3333
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 28mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.