DMC3025LSD-13 DIODES/ZETEX
Виробник: DIODES/ZETEX
Trans MOSFET N/P-CH 30V 6.5A/4.2A Automotive 8-Pin SO T/R DMC3025LSD DMC3025LSD TDMC3025LSD
кількість в упаковці: 10 шт
на замовлення 100 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 11.71 грн |
Відгуки про товар
Написати відгук
Технічний опис DMC3025LSD-13 DIODES/ZETEX
Description: MOSFET N/P-CH 30V 6.5A/4.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.2A, Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Інші пропозиції DMC3025LSD-13 за ціною від 10.46 грн до 51.92 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMC3025LSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 6.5A/4.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.2A Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
DMC3025LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.5/-8.5A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.02/0.045Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
на замовлення 14 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
|
DMC3025LSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 6.5A/4.2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.2A Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 12026 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
DMC3025LSD-13 | Diodes Incorporated |
MOSFETs 30V Comp ENH Mode 25 to 30V MosFET |
на замовлення 251 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
| DMC3025LSD-13 | Diodes |
MOSFET N/P-CH 30V 6.5A/4.2A 8SO Транзистори |
на замовлення 60 шт: термін постачання 5 дні (днів) |
|
| DMC3025LSD-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.5A/4.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 30V 6.5A/4.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 12.48 грн |
| 5000+ | 10.98 грн |
| 7500+ | 10.46 грн |
| DMC3025LSD-13 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.02/0.045Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.5/-8.5A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.02/0.045Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.00 грн |
| 14+ | 31.26 грн |
| DMC3025LSD-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.5A/4.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 30V 6.5A/4.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 12026 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 51.92 грн |
| 10+ | 31.04 грн |
| 100+ | 20.00 грн |
| 500+ | 14.29 грн |
| 1000+ | 12.84 грн |
| DMC3025LSD-13 |
|
Виробник: Diodes Incorporated
MOSFETs 30V Comp ENH Mode 25 to 30V MosFET
MOSFETs 30V Comp ENH Mode 25 to 30V MosFET
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
| DMC3025LSD-13 |
|
Виробник: Diodes
MOSFET N/P-CH 30V 6.5A/4.2A 8SO Транзистори
MOSFET N/P-CH 30V 6.5A/4.2A 8SO Транзистори
на замовлення 60 шт:
термін постачання 5 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 28.06 грн |