DMC3032LFDB-13 Diodes Incorporated

Description: MOSFET N/P-CH 30V 5.3A 6UDFN, Packaging: Bulk, Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 3.4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 336pF @ 25V, Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, 7.8nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, 2.1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B).