DMC3061SVTQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 880mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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Технічний опис DMC3061SVTQ-13 Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 880mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції DMC3061SVTQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMC3061SVTQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 10K |
товару немає в наявності |
В кошику од. на суму грн. |
| DMC3061SVTQ-13 |
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Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 10K
MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 10K
товару немає в наявності
В кошику
од. на суму грн.

