| Кількість | Ціна |
|---|---|
| 10+ | 36.02 грн |
| 15+ | 21.59 грн |
| 100+ | 12.31 грн |
| 500+ | 9.35 грн |
| 1000+ | 7.60 грн |
| 5000+ | 6.68 грн |
| 10000+ | 5.84 грн |
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Технічний опис DMC3071LVT-13 Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.6A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TSOT-26.
Інші пропозиції DMC3071LVT-13 за ціною від 7.09 грн до 37.98 грн
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DMC3071LVT-13 | Diodes Incorporated |
 Description: MOSFET N/P-CH 30V 4.6A TSOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TSOT-26 |
на замовлення 7561 шт: термін постачання 21-31 дні (днів) |
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| DMC3071LVT-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
на замовлення 7561 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.98 грн |
| 14+ | 22.78 грн |
| 100+ | 14.46 грн |
| 500+ | 10.21 грн |
| 1000+ | 9.12 грн |
| 2000+ | 8.20 грн |
| 5000+ | 7.09 грн |