DMC3350LDW-13 Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V SOT363 T&R, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 10V, 800pC @ 10V, Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 38.4pF @ 15V, 19pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), 600mA (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 350mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).