DMC3350LDWQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT363 T&R
Input Capacitance (Ciss) (Max) @ Vds: 38.4pF @ 15V, 19pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), 600mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 10V, 800pC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V
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Технічний опис DMC3350LDWQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT363 T&R, Input Capacitance (Ciss) (Max) @ Vds: 38.4pF @ 15V, 19pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), 600mA (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 350mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 10V, 800pC @ 10V, Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V.
Інші пропозиції DMC3350LDWQ-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMC3350LDWQ-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V SOT363 T&R 3K |
товару немає в наявності |
В кошику од. на суму грн. |
| DMC3350LDWQ-7 |
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Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V SOT363 T&R 3K
MOSFETs MOSFET BVDSS: 25V-30V SOT363 T&R 3K
товару немає в наявності
В кошику
од. на суму грн.



