DMC3400SDW-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.65A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 310mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.31 грн |
| 6000+ | 3.74 грн |
| 9000+ | 3.54 грн |
| 15000+ | 3.10 грн |
| 21000+ | 2.97 грн |
| 30000+ | 2.86 грн |
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Технічний опис DMC3400SDW-7 Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.65A SOT363, Part Status: Active, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V, Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA, Drain to Source Voltage (Vdss): 30V, Power - Max: 310mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Інші пропозиції DMC3400SDW-7 за ціною від 3.76 грн до 24.02 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DMC3400SDW-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 0.5/-0.36A Power dissipation: 0.39W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.4/0.9Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair |
на замовлення 1409 шт: термін постачання 14-30 дні (днів) |
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DMC3400SDW-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 0.65A SOT363Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA Drain to Source Voltage (Vdss): 30V Power - Max: 310mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 153919 шт: термін постачання 21-31 дні (днів) |
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| DMC3400SDW-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 0.5/-0.36A
Power dissipation: 0.39W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.4/0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 0.5/-0.36A
Power dissipation: 0.39W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.4/0.9Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
на замовлення 1409 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.07 грн |
| 37+ | 11.44 грн |
| 42+ | 10.03 грн |
| 100+ | 6.35 грн |
| 500+ | 4.39 грн |
| 1000+ | 3.76 грн |
| DMC3400SDW-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.65A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 310mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 0.65A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 310mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 153919 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.02 грн |
| 22+ | 14.10 грн |
| 100+ | 8.84 грн |
| 500+ | 6.15 грн |
| 1000+ | 5.46 грн |



