DMC4047LSD-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 40V 7A/5.1A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 16.51 грн |
| 5000+ | 14.63 грн |
| 7500+ | 13.98 грн |
| 12500+ | 12.44 грн |
| 17500+ | 12.33 грн |
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Технічний опис DMC4047LSD-13 Diodes Incorporated
Description: MOSFET N/P-CH 40V 7A/5.1A 8SO, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.4V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A, Drain to Source Voltage (Vdss): 40V, Power - Max: 1.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції DMC4047LSD-13 за ціною від 17.37 грн до 67.74 грн
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DMC4047LSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 40V 7A/5.1A 8SO Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A Drain to Source Voltage (Vdss): 40V Power - Max: 1.3W Technology: MOSFET (Metal Oxide) Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.4V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V |
на замовлення 37734 шт: термін постачання 21-31 дні (днів) |
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DMC4047LSD-13 | Diodes Incorporated |
MOSFETs FET BVDSS 31V 40V 1.3W 1180pF 21.3nC |
на замовлення 6500 шт: термін постачання 301-310 дні (днів) |
В кошику од. на суму грн. |
| DMC4047LSD-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 40V 7A/5.1A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Description: MOSFET N/P-CH 40V 7A/5.1A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
на замовлення 37734 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.74 грн |
| 10+ | 40.62 грн |
| 100+ | 26.54 грн |
| 500+ | 19.21 грн |
| 1000+ | 17.37 грн |
| DMC4047LSD-13 |
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Виробник: Diodes Incorporated
MOSFETs FET BVDSS 31V 40V 1.3W 1180pF 21.3nC
MOSFETs FET BVDSS 31V 40V 1.3W 1180pF 21.3nC
на замовлення 6500 шт:
термін постачання 301-310 дні (днів)