DMC6070LND-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.1A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXB)
Відгуки про товар
Написати відгук
Технічний опис DMC6070LND-7 Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.1A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A, Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXB).
Інші пропозиції DMC6070LND-7 за ціною від 17.30 грн до 86.24 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMC6070LND-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS |
на замовлення 1208 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
DMC6070LND-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 3.1A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXB) |
на замовлення 79750 шт: термін постачання 21-31 дні (днів) |
|
| DMC6070LND-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS
MOSFETs MOSFET BVDSS
на замовлення 1208 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 70.89 грн |
| 10+ | 52.49 грн |
| 100+ | 30.87 грн |
| 500+ | 24.68 грн |
| 1000+ | 21.87 грн |
| 2000+ | 17.30 грн |
| DMC6070LND-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.1A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXB)
Description: MOSFET N/P-CH 60V 3.1A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXB)
на замовлення 79750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 86.24 грн |
| 10+ | 51.88 грн |
| 100+ | 34.15 грн |
| 500+ | 24.91 грн |
| 1000+ | 22.60 грн |