Технічний опис DMG1012UWQ-7 Diodes Zetex
Description: MOSFET BVDSS: 8V~24V SOT323 T&R, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 950mA (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Power Dissipation (Max): 460mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMG1012UWQ-7 за ціною від 2.55 грн до 23.16 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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DMG1012UWQ-7 | Diodes Incorporated |
 Description: MOSFET BVDSS: 8V~24V SOT323 T&RPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 460mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 306000 шт: термін постачання 21-31 дні (днів) |
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DMG1012UWQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 950mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 460mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V Qualification: AEC-Q101 |
на замовлення 310072 шт: термін постачання 21-31 дні (днів) |
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DMG1012UWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323 Case: SOT323 Mounting: SMD Kind of package: 7 inch reel; tape Pulsed drain current: 6A Power dissipation: 0.61W Gate charge: 1nC Polarisation: unipolar Drain current: 0.75A Kind of channel: enhancement Drain-source voltage: 20V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±6V On-state resistance: 0.75Ω |
на замовлення 1942 шт: термін постачання 14-30 дні (днів) |
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DMG1012UWQ-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V SOT323 T&R 3K |
на замовлення 6747 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 460mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 460mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 306000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.53 грн |
| 6000+ | 3.93 грн |
| 9000+ | 3.71 грн |
| 15000+ | 3.25 грн |
| 21000+ | 3.12 грн |
| 30000+ | 2.98 грн |
| 75000+ | 2.65 грн |
| 150000+ | 2.55 грн |
| DMG1012UWQ-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 460mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 460mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 16 V
Qualification: AEC-Q101
на замовлення 310072 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.42 грн |
| 23+ | 13.10 грн |
| 100+ | 8.18 грн |
| 500+ | 5.68 грн |
| 1000+ | 5.04 грн |
| DMG1012UWQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed drain current: 6A
Power dissipation: 0.61W
Gate charge: 1nC
Polarisation: unipolar
Drain current: 0.75A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±6V
On-state resistance: 0.75Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 6A; 610mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed drain current: 6A
Power dissipation: 0.61W
Gate charge: 1nC
Polarisation: unipolar
Drain current: 0.75A
Kind of channel: enhancement
Drain-source voltage: 20V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±6V
On-state resistance: 0.75Ω
на замовлення 1942 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.16 грн |
| 32+ | 13.07 грн |
| 100+ | 8.16 грн |
| 500+ | 6.02 грн |
| 1000+ | 5.32 грн |
| DMG1012UWQ-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V SOT323 T&R 3K
MOSFETs MOSFET BVDSS: 8V-24V SOT323 T&R 3K
на замовлення 6747 шт:
термін постачання 21-30 дні (днів)