DMG1013T-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 460MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.65 грн |
| 6000+ | 3.15 грн |
| 9000+ | 2.96 грн |
| 15000+ | 2.59 грн |
| 21000+ | 2.47 грн |
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Технічний опис DMG1013T-7 Diodes Incorporated
Description: MOSFET P-CH 20V 460MA SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 460mA (Ta), Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V, Power Dissipation (Max): 270mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V.
Інші пропозиції DMG1013T-7 за ціною від 2.53 грн до 17.82 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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DMG1013T-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Case: SOT523 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -6A Drain current: -330mA Power dissipation: 0.27W On-state resistance: 0.7Ω Gate-source voltage: ±6V Kind of package: 7 inch reel; tape |
на замовлення 6159 шт: термін постачання 14-30 дні (днів) |
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DMG1013T-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 460MA SOT523Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V Power Dissipation (Max): 270mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V |
на замовлення 28800 шт: термін постачання 21-31 дні (днів) |
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DMG1013T-7 | Diodes Incorporated |
MOSFETs MOSFET P-CHANNEL SOT-523 |
на замовлення 1520579 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMG1013T-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -6A
Drain current: -330mA
Power dissipation: 0.27W
On-state resistance: 0.7Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -6A
Drain current: -330mA
Power dissipation: 0.27W
On-state resistance: 0.7Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
на замовлення 6159 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.18 грн |
| 48+ | 8.79 грн |
| 69+ | 6.05 грн |
| 100+ | 5.19 грн |
| 500+ | 3.73 грн |
| 1000+ | 3.32 грн |
| 3000+ | 2.80 грн |
| 6000+ | 2.53 грн |
| DMG1013T-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 460MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
Description: MOSFET P-CH 20V 460MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
на замовлення 28800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.82 грн |
| 29+ | 10.45 грн |
| 100+ | 6.53 грн |
| 500+ | 4.50 грн |
| 1000+ | 3.97 грн |
| DMG1013T-7 |
![]() |
Виробник: Diodes Incorporated
MOSFETs MOSFET P-CHANNEL SOT-523
MOSFETs MOSFET P-CHANNEL SOT-523
на замовлення 1520579 шт:
термін постачання 21-30 дні (днів)




