DMG1013UWQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 820MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)
FET Type: P-Channel
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 10000+ | 3.23 грн |
| 20000+ | 3.08 грн |
| 30000+ | 2.93 грн |
| 50000+ | 2.53 грн |
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Технічний опис DMG1013UWQ-13 Diodes Incorporated
Description: MOSFET P-CH 20V 820MA SOT323, Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±6V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 310mW (Ta), Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 820mA (Ta), FET Type: P-Channel, Qualification: AEC-Q101, Grade: Automotive, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Інші пропозиції DMG1013UWQ-13 за ціною від 2.79 грн до 22.40 грн
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DMG1013UWQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 20V 820MA SOT323 Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±6V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 592235 шт: термін постачання 21-31 дні (днів) |
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DMG1013UWQ-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: |
на замовлення 4170 шт: термін постачання 21-30 дні (днів) |
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