DMG1013UWQ-7-52 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V SOT323 T&R, Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±6V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 310mW, Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 820mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk.