DMG1023UV-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 1.03A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A
Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
| Кількість | Ціна |
|---|---|
| 3000+ | 8.18 грн |
| 6000+ | 7.17 грн |
| 9000+ | 6.81 грн |
| 15000+ | 6.02 грн |
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Технічний опис DMG1023UV-7 Diodes Incorporated
Description: MOSFET 2P-CH 20V 1.03A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 530mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.03A, Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V, Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active.
Інші пропозиції DMG1023UV-7 за ціною від 5.91 грн до 38.77 грн
| Фото | Назва | Виробник | Інформація |
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DMG1023UV-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563; ESD Version: ESD Type of transistor: P-MOSFET x2 Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: -20V Drain current: -680mA On-state resistance: 25Ω Power dissipation: 0.53W Gate-source voltage: ±6V Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 357 шт: термін постачання 14-30 дні (днів) |
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DMG1023UV-7 | Diodes Incorporated |
MOSFETs MOSFET P-CHANNEL |
на замовлення 5829 шт: термін постачання 21-30 дні (днів) |
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DMG1023UV-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 1.03A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 476472 шт: термін постачання 21-31 дні (днів) |
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| DMG1023UV-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563; ESD
Version: ESD
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -680mA
On-state resistance: 25Ω
Power dissipation: 0.53W
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.68A; 0.53W; SOT563; ESD
Version: ESD
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -680mA
On-state resistance: 25Ω
Power dissipation: 0.53W
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 357 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 35.55 грн |
| 17+ | 25.40 грн |
| 20+ | 21.67 грн |
| 100+ | 12.44 грн |
| DMG1023UV-7 |
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Виробник: Diodes Incorporated
MOSFETs MOSFET P-CHANNEL
MOSFETs MOSFET P-CHANNEL
на замовлення 5829 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 38.07 грн |
| 14+ | 23.29 грн |
| 100+ | 12.87 грн |
| 500+ | 9.70 грн |
| 1000+ | 7.03 грн |
| 3000+ | 5.91 грн |
| DMG1023UV-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 1.03A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A
Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET 2P-CH 20V 1.03A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A
Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 476472 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 38.77 грн |
| 14+ | 23.16 грн |
| 100+ | 14.76 грн |
| 500+ | 10.42 грн |
| 1000+ | 9.32 грн |