DMG1026UV-7 DIODES/ZETEX
Виробник: DIODES/ZETEX
Transistor 2xN-Channel MOSFET; 60V; 20V; 2,1Ohm; 440mA; 580mW; -55°C ~ 150°C; DMG1026UV-7 TDMG1026UV-7 Diodes
кількість в упаковці: 3000 шт
на замовлення 3000 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.78 грн |
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Технічний опис DMG1026UV-7 DIODES/ZETEX
Description: MOSFET 2N-CH 60V 0.41A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 580mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 410mA, Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V, Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active.
Інші пропозиції DMG1026UV-7 за ціною від 4.99 грн до 39.29 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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DMG1026UV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.41A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 580mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 410mA Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 888000 шт: термін постачання 21-31 дні (днів) |
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DMG1026UV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.41A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 580mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 410mA Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 890713 шт: термін постачання 21-31 дні (днів) |
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DMG1026UV-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563 Version: ESD Type of transistor: N-MOSFET x2 Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 1.8Ω Power dissipation: 0.58W Pulsed drain current: 1A Gate-source voltage: ±20V Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 683 шт: термін постачання 14-30 дні (днів) |
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DMG1026UV-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K |
на замовлення 63914 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMG1026UV-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.41A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET 2N-CH 60V 0.41A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 888000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.75 грн |
| 6000+ | 6.80 грн |
| 9000+ | 6.46 грн |
| 15000+ | 5.70 грн |
| 21000+ | 5.48 грн |
| 30000+ | 5.28 грн |
| 75000+ | 4.99 грн |
| DMG1026UV-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.41A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET 2N-CH 60V 0.41A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 580mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 890713 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 15+ | 21.19 грн |
| 100+ | 13.48 грн |
| 500+ | 9.52 грн |
| 1000+ | 8.51 грн |
| DMG1026UV-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563
Version: ESD
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 1.8Ω
Power dissipation: 0.58W
Pulsed drain current: 1A
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; Idm: 1A; 0.58W; SOT563
Version: ESD
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 1.8Ω
Power dissipation: 0.58W
Pulsed drain current: 1A
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 683 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.29 грн |
| 16+ | 26.45 грн |
| 50+ | 17.99 грн |
| 100+ | 15.26 грн |
| 500+ | 10.70 грн |
| DMG1026UV-7 |
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Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K
MOSFETs MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K
на замовлення 63914 шт:
термін постачання 21-30 дні (днів)