на замовлення 3069 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.16 грн |
| 13+ | 24.57 грн |
| 100+ | 11.42 грн |
| 1000+ | 7.74 грн |
| 3000+ | 6.94 грн |
| 9000+ | 6.48 грн |
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Технічний опис DMG1026UVQ-7 Diodes Incorporated
Description: MOSFET 2 N-CH 60V 440MA SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 650mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 440mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V, Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.45pC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active.
Інші пропозиції DMG1026UVQ-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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DMG1026UVQ-7 | Виробник : Diodes Inc |
 Trans MOSFET N-CH 60V 0.41A Automotive 6-Pin SOT-563 T/R |
товар відсутній |
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| DMG1026UVQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; Idm: 1A; 650mW; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.32A On-state resistance: 2.1Ω Type of transistor: N-MOSFET Power dissipation: 0.65W Polarisation: unipolar Gate charge: 0.45pC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A кількість в упаковці: 1 шт |
товар відсутній |
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| DMG1026UVQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2 N-CH 60V 440MA SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 650mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.45pC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
товар відсутній |
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| DMG1026UVQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 320mA; Idm: 1A; 650mW; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.32A On-state resistance: 2.1Ω Type of transistor: N-MOSFET Power dissipation: 0.65W Polarisation: unipolar Gate charge: 0.45pC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A |
товар відсутній |