DMG1029SV-7-52 Diodes Incorporated
Виробник: Diodes Incorporated
Description: 2N7002 Family SOT563 T&R 3K
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 450mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Bulk
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Технічний опис DMG1029SV-7-52 Diodes Incorporated
Description: 2N7002 Family SOT563 T&R 3K, Part Status: Active, Supplier Device Package: SOT-563, Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA, FET Feature: Standard, Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V, Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 450mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Bulk.