DMG10N60SCT Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (Type TH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1587 pF @ 16 V
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Технічний опис DMG10N60SCT Diodes Incorporated
Description: MOSFET N-CH 600V 12A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V, Power Dissipation (Max): 178W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB (Type TH), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1587 pF @ 16 V.
Інші пропозиції DMG10N60SCT
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DMG10N60SCT | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 15A; 71W; TO220AB Type of transistor: N-MOSFET Power dissipation: 71W Case: TO220AB Mounting: THT Gate charge: 35nC Kind of package: tube Gate-source voltage: ±30V On-state resistance: 0.6Ω Pulsed drain current: 15A Polarisation: unipolar Drain current: 7.9A Kind of channel: enhancement Drain-source voltage: 600V |
товару немає в наявності |
В кошику од. на суму грн. |
| DMG10N60SCT | Diodes Zetex | N-CHANNEL ENHANCEMENT MODE MOSFET |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. |
| DMG10N60SCT |
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 15A; 71W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 71W
Case: TO220AB
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Pulsed drain current: 15A
Polarisation: unipolar
Drain current: 7.9A
Kind of channel: enhancement
Drain-source voltage: 600V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 15A; 71W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 71W
Case: TO220AB
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Pulsed drain current: 15A
Polarisation: unipolar
Drain current: 7.9A
Kind of channel: enhancement
Drain-source voltage: 600V
товару немає в наявності
В кошику
од. на суму грн.
| DMG10N60SCT |
Виробник: Diodes Zetex
N-CHANNEL ENHANCEMENT MODE MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.