Технічний опис DMG2301LK-13 Diodes Inc
Description: MOSFET P-CH 20V 2.4A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V, Power Dissipation (Max): 840mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMG2301LK-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMG2301LK-13 | Виробник : Diodes Zetex |
 Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R |
товару немає в наявності |
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DMG2301LK-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.9A; Idm: -8A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.9A Pulsed drain current: -8A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 298mΩ Mounting: SMD Gate charge: 3.4nC Kind of package: 13 inch reel; tape Kind of channel: enhancement кількість в упаковці: 10000 шт |
товару немає в наявності |
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DMG2301LK-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 20V 2.4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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DMG2301LK-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
товару немає в наявності |
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DMG2301LK-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.9A; Idm: -8A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.9A Pulsed drain current: -8A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 298mΩ Mounting: SMD Gate charge: 3.4nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |