DMG2302UKQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 2.8A SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3000+ | 6.43 грн |
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Технічний опис DMG2302UKQ-7 Diodes Incorporated
Description: MOSFET N-CH 20V 2.8A SOT23 T&R 3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції DMG2302UKQ-7 за ціною від 7.10 грн до 30.64 грн
| Фото | Назва | Виробник | Інформація |
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DMG2302UKQ-7 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
на замовлення 84370 шт: термін постачання 21-30 дні (днів) |
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DMG2302UKQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 2.8A SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 4333 шт: термін постачання 21-31 дні (днів) |
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